Extracting the Schottky barrier height from axial contacts to semiconductor nanowires

Solid-State Electronics

Volumn 54, Issue 7, 2010, Pages 689-695

  Sarpatwari, K ^a,b   Dellas, N S ^b   Awadelkarim, O O ^a   Mohney, S E ^b  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Nanoscale contact; Nanowire; Schottky barrier height; Schottky contact

Indexed keywords

BARRIER HEIGHTS; IV CHARACTERISTICS; NANO SCALE; NANOSCALE CONTACT; SCHOTTKY BARRIER CONTACTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SEMICONDUCTOR NANOWIRE; SI NANOWIRE; SURFACE EFFECT; THREE DIMENSIONAL DEVICE SIMULATIONS;

CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955328694     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.03.006     Document Type: Article

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