New current-voltage model for surrounding-gate metal-oxide-semiconductor field effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 A, 2005, Pages 6446-6451

  Chiang, Te Kuang ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Charge sheet approximation; Continuity equation; I V model; Surrounding gate MOSFETs

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTOR DOPING; SILICON;

CONTINUITY EQUATION; I-V MODEL; SURROUNDING GATE-MOSFETS;

MOSFET DEVICES;

EID: 31544469237     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6446     Document Type: Article

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