Ion beam doping of silicon nanowires

Nano Letters

Volumn 8, Issue 8, 2008, Pages 2188-2193

  Colli, Alan ^a   Fasoli, Andrea ^a   Ronning, Carsten ^b,c   Pisana, Simone ^a   Piscanec, Stefano ^a   Ferrari, Andrea C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

B IMPLANTATIONS; CRYSTALLINE STRUCTURES; ELECTRICAL TRANSPORTS; FLUENCES; P TYPES; PHONON CONFINEMENTS; RAMAN MEASUREMENTS; SI NANOWIRES; SILICON NANOWIRES; STRUCTURAL DISORDERS; THERMAL-ANNEALING;

AMORPHIZATION; ELECTRIC WIRE; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 56849128027     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl080610d     Document Type: Article

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