Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Semiconductor Science and Technology

Volumn 24, Issue 10, 2009, Pages

  Kang, Zhaoyi ^a   Zhang, Liangliang ^a   Wang, Runsheng ^a   Huang, Ru ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPINNING; DOPANT SEGREGATION; DRAIN-INDUCED BARRIER LOWERING; ELECTROSTATIC PROPERTIES; GATE-ALL-AROUND; NONUNIFORM; OPTIMIZED CONDITIONS; PHYSICAL LIMITATIONS; QUANTITATIVE ASSESSMENTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SILICON NANOWIRE TRANSISTORS; SUBTHRESHOLD; SUBTHRESHOLD SWING;

ELECTROSTATICS; NANOWIRES; SCHOTTKY BARRIER DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350641407     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/10/105001     Document Type: Article

References (39)

1. Cui Y, Zhong Z, Wang D, Wang W and Lieber C 2003 Nano Lett. 3 149-52
2. Yeo K H et al 2006 IEDM Tech. Dig. pp 1-4
3. Wang J, Polizzi E and Lundstrom M 2003 IEDM Tech. Dig. pp 29.5.1-29.5.4
4. Bescond M, Cavassilas N, Kalna K, Nehari K, Raymond L, Autran J L, Lannoo M and Asenov A 2005 IEDM Tech. Dig. pp 526-9
5. Tian Y, Huang R, Wang Y, Zhuge J, Wang R, Liu J, Zhang X and Wang Y 2007 IEDM Tech. Dig. pp 895-8
6. Dixit A, Kottantharayil A, Collaert N, Goodwin M, Jurczak M and Meyer K 2005 IEEE Trans. Electron. Devices 52 1132-40
7. Jiang Y, Liow T Y, Singh N, Tan L H, Lo G Q, Chan D S H and Kwong D L 2008 VLSI Symp. Tech. Dig. pp 34-5
8. Yu Y S, Lee S H, Oh J H, Kim H J, Hwang S W and Ahn D 2008 Semicond. Sci. Technol. 23 035025
9. Larson J M and Snyder J P 2006 IEEE Trans. Electron. Devices 53 1048-58
10. Kedzierski J, Xuan P, Anderson E H, Boker J, King T-J and Hu C 2000 IEDM Tech. Dig. pp 57-60
11. Huang X et al 1999 IEDM Tech. Dig. pp 67-70
12. Guo J and Lundstrom M 2002 IEEE Trans. Electron. Devices 49 1897-902
13. Ahn C and Shin M 2006 IEEE Trans. Nanotechnol. 5 278-83
14. Shin M 2008 IEEE Trans. Electron. Devices 55 737-42
15. Xiong S, King T-J and Bokor J 2005 IEEE Trans. Electron. Devices 52 1859-67
16. Tan E J, Pey K L, Singh N, Lo G Q, Chi D Z, Chin Y K, Tang L J, Lee P S and Ho C K F 2008 IEEE Electron. Device Lett. 29 902-5
17. Tan E J, Pey K L, Singh N, Lo G Q, Chi D Z, Chin Y K, Hoe K M, Cui G and Lee P S 2008 IEEE Electron Device Lett. 29 1167-70
18. Zhu S, Chen J, Li M-F, Lee S J, Singh J, Zhu C X, Du A, Tung C H, Chin A and Kwong D L 2004 IEEE Electron Device Lett. 25 565-7
19. Vega R A and King T-J 2008 IEEE Trans. Electron. Devices 55 2665-77
20. Pascual E, Martin M J, Rengel R, Larrieu G and Dubois E 2009 Semicond. Sci. Technol. 24 025022
21. Kaneko A et al 2006 IEDM Tech. Dig. pp 893-6
22. Tsui B-Y and Lin C-P 2004 IEEE Electron Device Lett. 25 430-2
23. Connelly D, Faulkner C, Clifton P A and Grupp D E 2006 Appl. Phys. Lett. 88 012105
24. TCAD Sentaurus Device User's Manual SynopsysMountain View, CA, 2005 - ref-separator -
25. Ieong M, Solomon P M and Laux S E 1998 IEDM Tech. Dig. pp 733-6
26. Matsuzawa K, Uchida K and Nishiyama A 2000 IEEE Tran. Electron Devices 47 103-8
27. Ikeda K, Yamashita Y, Endoh A, Fukano T, Hikosaka K and Mimura T 2002 IEEE Electron. Device Lett. 23 670-2
28. Zhu S, Li R, Lee S J, Li M F, Du A, Singh J, Zhu C X, Chin A and Kwong D L 2005 IEEE Electron. Device Lett. 26 81-3
29. Maeda T, Ikeda K, Nakaharai S, Tezuka T, Sugiyama N, Moriyama Y and Takagi S 2005 IEEE Electron. Device Lett. 26 102-4
30. Dubois E and Larrieu G 2002 Solid State Electron 46 997-1004
31. Zhang M, Knoch J, Zhao Q T, Lenk St, Breuer U and Mantl S 2005 ESSDERC pp 457-60
32. Connelly D, Faulkner C and Grupp D E 2003 IEEE Electron Device Lett. 24 411-3
33. Connelly D, Faulkner C and Grupp D E 2004 IEEE Trans. Electron. Devices 50 1340-6
34. Qiu Z, Zhang Z, stling M and Zhang S 2008 IEEE Trans. Electron. Devices 55 396-403
35. Zhu S et al 2004 Solid State Electron. 48 1987-92
36. Larrieu G and Dubois E 2006 IEEE Trans. Electron. Devices 52 2720-6
37. Ko C H, Chen H W, Wang T J, Kuan T M, Hsu J W, Huang C Y, Ge C H, Lai L S and Lee W C 2006 VLSI Symp. Tech. Dig. pp 98-9
38. Choi S J et al 2008 IEDM Tech. Dig. pp 223-6
39. Kobayashi M, Kinoshita A, Saraswat K, Wong H-S P and Nishi Y 2008 VLSI Symp. Tech. Dig. pp 54-5