Contact mechanisms and design principles for (Schottky and Ohmic) metal contacts to semiconductor nanowires

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Mohammad, S Noor ^a,b  

^a Sciencotech   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHICITY; APPLIED BIAS; BAND TAIL; BARRIER HEIGHTS; CONTACT CHARACTERISTICS; CONTACT MECHANISM; DESIGN CRITERION; DESIGN PRINCIPLES; DOPING DEPENDENCE; ENERGY BANDGAPS; FUNDAMENTAL PHYSICS; GAUSSIAN PEAKS; IDEALITY FACTORS; INTERFACE STRUCTURES; METAL CONTACTS; SCHOTTKY; SCHOTTKY BARRIER TRANSISTORS; SCHOTTKY CONTACTS; SEMICONDUCTOR NANOWIRE; UNIFIED MODEL;

DESIGN; ELECTRIC CONTACTORS; NANOWIRES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77955916251     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3446845     Document Type: Article

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