A new mechanism for modulation of Schottky barrier heights on silicon nanowires

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 7, 2008, Pages 2508-2512

  Piscator, J ^a   Engstrom O ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Doping; Oxide charge; Schottky contact; Silicon nanowires

Indexed keywords

DOPING (ADDITIVES); IMPURITIES; NANOWIRES; SILICON;

OXIDE CHARGE; SCHOTTKY CONTACT; SILICON NANOWIRES;

SCHOTTKY BARRIER DIODES;

EID: 44049089549     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.07.018     Document Type: Article

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