Field-effect transistor based on β-SiC nanowire

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 463-465

  Zhou, Wei Min ^a   Fang, F ^a   Hou, Z Y ^a   Yan, L J ^a   Zhang, Y F ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

SiC nanowires; Field effect transistor (FET); High temperature

Indexed keywords

CARRIER MOBILITY; HIGH TEMPERATURE EFFECTS; NANOTECHNOLOGY; SEMICONDUCTING SILICON COMPOUNDS;

ARRHENIUS FUNCTION; DRAIN CURRENT; HIGH-FREQUENCY INDUCTION; ROOM TEMPERATURE; SILICON CARBIDE NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 33744737932     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.874219     Document Type: Article

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