Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes

Journal of Chemical Physics

Volumn 124, Issue 6, 2006, Pages

  He, Maoqi ^a   Mohammad, S Noor ^b,c,d  

^a HOWARD UNIVERSITY   (United States)

^b School of Engineering   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEXAGONAL PHASES; POISONOUS GASES; QUATERNARY NANOWIRES; WHISKERS;

ARSENIC; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SINGLE CRYSTALS; THIN FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 32644458380     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2166357     Document Type: Article

References (28)

1. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl015667d 2, 101 (2002); M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. Wang, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl0346427 3, 1531 (2003); X. Duan and C. M. Lieber, J. Am. Chem. Soc. 0002-7863 10.1021/ja993713u 122, 188 (2000); C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, and H. L. Liu, J. Am. Chem. Soc. 0002-7863 10.1021/ja0040518 123, 2791 (2001); Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
2. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl015667d 2, 101 (2002); M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. Wang, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl0346427 3, 1531 (2003); X. Duan and C. M. Lieber, J. Am. Chem. Soc. 0002-7863 10.1021/ja993713u 122, 188 (2000); C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, and H. L. Liu, J. Am. Chem. Soc. 0002-7863 10.1021/ja0040518 123, 2791 (2001); Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
3. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl015667d 2, 101 (2002); M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. Wang, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl0346427 3, 1531 (2003); X. Duan and C. M. Lieber, J. Am. Chem. Soc. 0002-7863 10.1021/ja993713u 122, 188 (2000); C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, and H. L. Liu, J. Am. Chem. Soc. 0002-7863 10.1021/ja0040518 123, 2791 (2001); Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
4. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl015667d 2, 101 (2002); M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. Wang, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl0346427 3, 1531 (2003); X. Duan and C. M. Lieber, J. Am. Chem. Soc. 0002-7863 10.1021/ja993713u 122, 188 (2000); C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, and H. L. Liu, J. Am. Chem. Soc. 0002-7863 10.1021/ja0040518 123, 2791 (2001); Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
5. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl015667d 2, 101 (2002); M. C. McAlpine, R. S. Friedman, S. Jin, K. Lin, W. Wang, and C. M. Lieber, Nano Lett. 1530-6984 10.1021/nl0346427 3, 1531 (2003); X. Duan and C. M. Lieber, J. Am. Chem. Soc. 0002-7863 10.1021/ja993713u 122, 188 (2000); C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, and H. L. Liu, J. Am. Chem. Soc. 0002-7863 10.1021/ja0040518 123, 2791 (2001); Y. Wu and P. Yang, J. Am. Chem. Soc. 123, 3165 (2001).
6. Y. Heo, L. C. Tien, Y. Kwon, D. P. Norton, S. J. Pearton, B. S. Kang, and F. Ren, Appl. Phys. Lett. 85, 2274 (2004).
7. H. Li, T. Daniels-Race, and M. A. Hasan, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1386383 19, 1471 (2001); L. Chu, M. Arzberger, A. Zrenner, G. Bohm, and G. Abstreiter, Appl. Phys. Lett. 75, 2247 (1999).
8. H. Li, T. Daniels-Race, and M. A. Hasan, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1386383 19, 1471 (2001); L. Chu, M. Arzberger, A. Zrenner, G. Bohm, and G. Abstreiter, Appl. Phys. Lett. 75, 2247 (1999).
9. Z. H. Wu, X. Y. Mei, D. Kim, M. Blumin, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1532772 81, 5177 (2002); J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. E. Ruda, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.589291 15, 554 (1997); Z. H. Wu, M. Sun, X. Y. Mei, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1775037 85, 657 (2004); G. Chang, A. Kolmakov, Y. Zhang, M. Muskovits, R. Munden, M. A. Reed, G. Wang, D. Moses, and J. Zhang, Appl. Phys. Lett. 83, 1578 (2003).
10. Z. H. Wu, X. Y. Mei, D. Kim, M. Blumin, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1532772 81, 5177 (2002); J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. E. Ruda, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.589291 15, 554 (1997); Z. H. Wu, M. Sun, X. Y. Mei, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1775037 85, 657 (2004); G. Chang, A. Kolmakov, Y. Zhang, M. Muskovits, R. Munden, M. A. Reed, G. Wang, D. Moses, and J. Zhang, Appl. Phys. Lett. 83, 1578 (2003).
11. Z. H. Wu, X. Y. Mei, D. Kim, M. Blumin, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1532772 81, 5177 (2002); J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. E. Ruda, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.589291 15, 554 (1997); Z. H. Wu, M. Sun, X. Y. Mei, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1775037 85, 657 (2004); G. Chang, A. Kolmakov, Y. Zhang, M. Muskovits, R. Munden, M. A. Reed, G. Wang, D. Moses, and J. Zhang, Appl. Phys. Lett. 83, 1578 (2003).
12. Z. H. Wu, X. Y. Mei, D. Kim, M. Blumin, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1532772 81, 5177 (2002); J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. E. Ruda, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.589291 15, 554 (1997); Z. H. Wu, M. Sun, X. Y. Mei, and H. E. Ruda, Appl. Phys. Lett. 0003-6951 10.1063/1.1775037 85, 657 (2004); G. Chang, A. Kolmakov, Y. Zhang, M. Muskovits, R. Munden, M. A. Reed, G. Wang, D. Moses, and J. Zhang, Appl. Phys. Lett. 83, 1578 (2003).
13. H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, Nano Lett. 1530-6984 10.1021/nl049461z 4, 1247 (2004); T. Tang, S. Han, W. Jin, X. Liu, C. Li, D. Zhang, C. Zhou, B. Chen, J. Han, and M. Meyyapan, J. Mater. Res. 19, 423 (2004).
14. H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, Nano Lett. 1530-6984 10.1021/nl049461z 4, 1247 (2004); T. Tang, S. Han, W. Jin, X. Liu, C. Li, D. Zhang, C. Zhou, B. Chen, J. Han, and M. Meyyapan, J. Mater. Res. 19, 423 (2004).
15. S. Torii, B. R. Shim, H. Yasuda, K. Maehashi, S. Hasegawa, and H. Nakashima, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.36.L1645 36, L1645 (1997); Z. Sun, S. F. Yoon, J. Wu, and Z. Wang, Appl. Phys. Lett. 91, 6021 (2002).
16. S. Torii, B. R. Shim, H. Yasuda, K. Maehashi, S. Hasegawa, and H. Nakashima, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.36.L1645 36, L1645 (1997); Z. Sun, S. F. Yoon, J. Wu, and Z. Wang, Appl. Phys. Lett. 91, 6021 (2002).
17. H. J. Kin, Y. J. Park, Y. M. Park, E. K. Kim, and T. W. Kim, Appl. Phys. Lett. 78, 3253 (2001).
18. A. G. Rinzler, J. H. Hafner, P. Nikolaev, L. Lou, S. G. Kim, D. Tomanek, P. Lordlander, D. T. Colbert, and R. E. Smalley, Science 269, 1550 (1995).
19. A. D. Berry, R. J. Tonucci, and M. Fatemi, Appl. Phys. Lett. 69, 2846 (1996).
20. X. Duan, Y. Huang, J. Wang, and C. M. Lieber, Nature (London) 409, 66 (2001).
21. A. Bachtold, P. Hedley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
22. M. He, I. Minus, P. Zhou, S. N. Mohammad, J. B. Halpern, R. Jacobs, W. L. Sarney, L. Salamanca-Riba, and R. D. Vispute, Appl. Phys. Lett. 77, 3731 (2000).
23. S. N. Mohammad, J. Appl. Phys. (submitted).
24. M. He, M. E. E. Fahmi, and S. N. Mohammad, Appl. Phys. Lett. 82, 3749 (2003).
25. J. B. McChesney, P. M. Bridenbaugh, and P. B. O'Connor, Mater. Res. Bull. 5, 783 (1970).
26. L. A. Marasina, I. G. Pichugin, and M. Tlaczala, Krist. Tech. 12, 541 (1977).
27. A. M. S. ElAhl, M. He, P. Zhou, J. Appl. Phys. 94, 7749 (2003).
28. M. M. E. Fahmi, A. Khan, J. A. Griffin, G. L. Harris, L. H. Robins, R. G. Birdwell, K. S. Yang, D. J. Smith, T. Steiner, and S. N. Mohammad, J. Appl. Phys. 94, 7576 (2003).