Modeling and analysis of body potential of cylindrical gate-all-around nanowire transistor

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2409-2416

  Ray, Biswajit ^a   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Gate all around (GAA); Multigate transistor; Short channel effects (SCE); Subthreshold slope; Undoped body; Virtual cathode

Indexed keywords

COMPUTER NETWORKS; ELECTRIC WIRE; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POISSON EQUATION; TRANSISTORS;

GATE ALL AROUND (GAA); MULTIGATE TRANSISTOR; SHORT-CHANNEL EFFECTS (SCE); SUBTHRESHOLD SLOPE; UNDOPED BODY; VIRTUAL CATHODE;

MOSFET DEVICES;

EID: 50549105182     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.927669     Document Type: Article

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