Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

Nanotechnology

Volumn 16, Issue 9, 2005, Pages 1482-1485

  Koo, Sang Mo ^a   Edelstein, Monica D ^a   Li, Qiliang ^a   Richter, Curt A ^a   Vogel, Eric M ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; NANOSTRUCTURED MATERIALS; SCHOTTKY BARRIER DIODES; SILICON;

CONDUCTION MECHANISMS; DRAIN CURRENT; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS (SINWFET); THERMAL EMISSION LEAKAGE;

FIELD EFFECT TRANSISTORS;

EID: 23444437920     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/9/011     Document Type: Review

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