Nanodot and nanowire transistor device modeling and fabrication process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 B, 2007, Pages 6213-6217

  Chen, Yijian ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

MOSFET; Nanodot; Nanowire; Poisson's equation; Surrounding gate

Indexed keywords

ELECTRIC POTENTIAL; LITHOGRAPHY; MICROFABRICATION; MOSFET DEVICES; NANOWIRES; PARAMETER ESTIMATION; POISSON EQUATION;

INVERSION CHARGE; LITHOGRAPHIC RESOLUTION; NANODOTS;

TRANSISTORS;

EID: 34648830649     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6213     Document Type: Article

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