Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Nanotechnology

Volumn 17, Issue 5, 2006, Pages 1264-1271

  Cha, Ho Young ^a,d   Wu, Huaqiang ^a   Chandrashekhar, Mvs ^a   Choi, Y C ^a   Chae, S ^b   Koley, G ^c   Spencer, M G ^a  

^a Cornell University   (United States)

^b SAMSUNG Electronics   (South Korea)

^c University of South Carolina   (United States)

^d GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; FIELD EFFECT SEMICONDUCTOR DEVICES; GALLIUM NITRIDE; NICKEL; SATURATION (MATERIALS COMPOSITION);

CURRENT SATURATION; TOP-GATE STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 33144458431     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/17/5/018     Document Type: Article

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