A model-based methodology for the analysis and design of atomic layer deposition processes-Part I: Mechanistic modelling of continuous flow reactors

Chemical Engineering Science

Volumn 81, Issue , 2012, Pages 260-272

  Holmqvist, A ^a   Torndahl T ^b   Stenstrom S ^a  

^a LUND UNIVERSITY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Atomic layer deposition; Computational fluid dynamics; Ex situ film characterization; Mathematical modelling; Reaction engineering; Transport processes

Indexed keywords

ANALYSIS AND DESIGN; COMPLEX INTERACTION; CONTINUOUS FLOW REACTORS; CONTROLLED DEPOSITION; CROSS FLOWS; DISCRETE SETS; DYNAMIC EVOLUTION; EX SITU; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL VALIDATIONS; FILM CHARACTERIZATIONS; FILM THICKNESS PROFILE; GAS FLOW DISTRIBUTION; GASPHASE; MECHANISTIC ANALYSIS; OPERATING PARAMETERS; OPTIMIZATION AND CONTROL; PROCESS MODEL; REACTION ENGINEERING; REACTION MECHANISM; REACTION STEPS; REACTOR MODELS; REACTOR SYSTEMS; SAMPLING POSITIONS; SPATIAL EVOLUTION; SUBSTRATE FILMS; SUBSTRATE SURFACE; SURFACE COVERAGES; THICKNESS UNIFORMITY; TRANSPORT PROCESS; X RAY FLUORESCENCE ANALYSIS; X RAY REFLECTIVITY; ZNO; ZNO FILMS;

CHEMISORPTION; COMPUTATIONAL FLUID DYNAMICS; EPITAXIAL FILMS; FILM GROWTH; FILM THICKNESS; MATHEMATICAL MODELS; SUBSTRATES; SURFACE REACTIONS; THICKNESS MEASUREMENT; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84864506085     PISSN: 00092509     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ces.2012.07.015     Document Type: Article

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