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Volumn 312, Issue 8, 2010, Pages 1449-1452

Development of a multiscale model for an atomic layer deposition process

Author keywords

A1. Computer simulation; A1. Growth models; A1. Mass transfer; A1. Surface structure; A3. Atomic layer epitaxy

Indexed keywords

A1. GROWTH MODELS; A1. MASS TRANSFER; A1. SURFACE STRUCTURE; A3. ATOMIC LAYER EPITAXY; GROWTH MODELS;

EID: 77949578167     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.041     Document Type: Article
Times cited : (43)

References (13)
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    • Elliott, S.D.1    Greer, J.C.2
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    • Perez, I.1    Robertson, E.2    Banerjee, P.3    Henn-Lecordier, L.4    Son, S.J.5    Lee, S.B.6    Rubloff, G.W.7
  • 11
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    • Surface chemistry of atomic later deposition: a case study of the trimethylaluminum/water system
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    • Puurunen, R.L.1
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    • December
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    • Song, L.1    Shen, S.2    Tsakalis, K.S.3    Crouch, P.E.4    Cale, T.S.5
  • 13
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    • Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition
    • Widjaja Y., and Musgrave C.B. Quantum chemical study of the mechanism of aluminum oxide atomic layer deposition. Appl. Phys. Lett. 80 (2002) 3304-3306
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.