Theoretical evaluation of film growth rate during atomic layer epitaxy

Applied Surface Science

Volumn 158, Issue 1, 2000, Pages 81-91

  Park, Hyung Sang ^a   Min, Jae Sik ^a   Lim, Jung Wook ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DEPOSITION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; MONOLAYERS; REACTION KINETICS; SEMICONDUCTING FILMS; SURFACES;

ATOMIC LAYER EPITAXY; FILM DEPOSITION EFFICIENCY; FILM GROWTH RATE; FILM THICKNESS; FRACTIONAL COVERAGE EXCHANGE;

FILM GROWTH;

EID: 0033700652     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00580-2     Document Type: Article

References (14)

1. Suntola T. Mater. Sci. Rep. 4:1989;261.
2. Suntola T. Thin Solid Films. 216:1992;84.
3. Goodman C.H.L., Pessa M. J. Appl. Phys. 60:1986;R65.
4. Herman M.A., Vulli M., Pessa M. J. Cryst. Growth. 73:1985;403.
5. George S.M., Ott A.W., Klaus J.W. J. Phys. Chem. 100:1996;13121.
6. Pessa M., Makela R., Suntola T. Appl. Phys. Lett. 38:1981;131.
7. Sneh O., Wise M.L., Ott A.W., Okada L.A., George S.M. Surf. Sci. 334:1995;135.
8. Morishita S., Sugahara S., Matsumura M. Appl. Surf. Sci. 112:1997;198.
9. Masel R.I. Principles of Adsorption and Reaction on Solid Surfaces. 1st edn., 1996;Wiley, New York.
10. Creighton J.R. Appl. Surf. Sci. 82/83:1994;171.
11. Faschinger W., Sitter H., Juza P. Appl. Phys. Lett. 53:1988;2519.
12. Faschinger W., Sitter H. J. Cryst. Growth. 99:1990;566.
13. Suemitsu M., Nakazawa H., Miyamoto N. Appl. Surf. Sci. 82-83:1994;449.
14. Sakuraba M., Murota J., Watanabe T., Sawada Y., Ono S. Appl. Surf. Sci. 82-83:1994;354.