A kinetic model for step coverage by atomic layer deposition in narrow holes or trenches

Chemical Vapor Deposition

Volumn 9, Issue 2, 2003, Pages 73-78

  Gordon, Roy G ^a   Hausmann, Dennis ^a   Kim, Esther ^a   Shepard, Joseph ^b  

^a HARVARD UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Atomic layer deposition (ALD); Hafnium dioxide; Kinetic models

Indexed keywords

COATINGS; CONFORMATIONS; GAS CHROMATOGRAPHY; HAFNIUM COMPOUNDS; MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THIN FILMS; VAPOR PRESSURE; VAPORS;

ATOMIC LAYER DEPOSITION (ALD); CONFORMAL COATINGS; HAFNIUM DIOXIDE; KINETIC MODELS;

DEPOSITION;

EID: 0141610893     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200390005     Document Type: Article

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