Real-time observation and optimization of tungsten atomic layer deposition process cycle

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages 780-789

  Lei, Wei ^a   Henn Lecordier, Laurent ^a   Anderle, Mariano ^a,b   Rubloff, Gary W ^a   Barozzi, Mario ^b   Bersani, Massimo ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b ITC IRST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); REACTION CONDITIONS; REACTION DYNAMICS;

ADSORPTION; DEPOSITION; MASS SPECTROMETRY; REACTION KINETICS;

TUNGSTEN;

EID: 33645504942     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2184320     Document Type: Article

References (34)

1. H. Kim, J. Vac. Sci. Technol. B 21, 2231 (2003).
2. L. Niinisto, J. Paivasaari, J. Niinisto, M. Putkonen, and M. Nieminen, Phys. Status Solidi A 201, 1443 (2004).
3. T. M. Mayer, J. W. Elam, S. M. George, P. G. Kotula, and R. S. Goeke, Appl. Phys. Lett. 82, 2883 (2003).
4. N. D. Hoivik, J. W. Elam, R. J. Linderman, V. M. Bright, S. M. George, and Y. C. Lee, Sens. Actuators, A 103, 100 (2003).
5. M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. 16, 639 (2004).
6. M. Ylilammi, Thin Solid Films 279, 124 (1996).
7. M. A. Alam and M. L. Green, J. Appl. Phys. 94, 3403 (2003).
8. K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskela, Adv. Mater. (Weinheim, Ger.) 14, A199 (2002).
9. J. W. Elam, M. D. Groner, and S. M. George, Rev. Sci. Instrum. 73, 2981 (2002).
10. H. Kim and S. M. Rossnagel, J. Vac. Sci. Technol. A 20, 802 (2002).
11. J. W. Klaus, S. J. Ferro, and S. M. George, Thin Solid Films 360, 145 (2000).
12. J. W. Elam, C. E. Nelson, R. K. Grubbs, and S. M. George, Thin Solid Films 386, 41 (2001).
13. Y. Luo, D. Slater, M. Han, J. Moryl, and R. M. Osgood, Appl. Phys. Lett. 71, 3799 (1997).
14. R. Ares, S. P. Watkins, P. Yeo, G. A. Horley, P. O'Brien, and A. C. Jones, J. Appl. Phys. 83, 3390 (1998).
15. A. Rosental, P. Adamson, A. Gerst, and A. Niilisk, Appl. Surf. Sci. 107, 178 (1996).
16. M. Schuisky, J. W. Elam, and S. M. George, Appl. Phys. Lett. 81, 180 (2002).
17. T. Gougousi, Y. H. Xu, J. N. Kidder, G. W. Rubloff, and C. R. Tilford, J. Vac. Sci. Technol. B 18, 1352 (2000).
18. Y. Xu, T. Gougousi, L. Henn-Lecordier, Y. Liu, S. Cho, and G. W. Rubloff, J. Vac. Sci. Technol. B 20, 2351 (2002).
19. L. L. Tedder, G. W. Rubloff, B. F. Conaghan, and G. N. Parsons, J. Vac. Sci. Technol. A 14, 2680 (1996).
20. M. Juppo, A. Rahtu, M. Ritala, and M. Leskela, Langmuir 16, 4034 (2000).
21. A. Rahtu, T. Alaranta, and M. Ritala, Langmuir 17, 6506 (2001).
22. M. Juppo, A. Rahtu, and M. Ritala, Chem. Mater. 14, 281 (2002).
23. A. Rahtu and M. Ritala, Chem. Vap. Deposition 8, 21 (2002).
24. R. Matero, A. Rahtu, and M. Ritala, Chem. Mater. 13, 4506 (2001).
25. A. Rahtu, K. Kukli, and M. Ritala, Chem. Mater. 13, 817 (2001).
26. R. K. Grubbs, N. J. Steinmetz, and S. M. George, J. Vac. Sci. Technol. B 22, 1811 (2004).
27. A. Rahtu and M. Ritala, J. Mater. Chem. 12, 1484 (2002).
28. Y. Saito and T. Takagi, J. Electrochem. Soc. 143, 3670 (1996).
29. K. R. Williams and R. S. Muller, J. Microelectromech. Syst. 5, 256 (1996).
30. R. Canteri, M. Anderle, and L. Moro, Surf. Interface Anal. 18, 765 (1992).
31. M. Fedrizzi, M. Bersani, M. Sbetti, and M. Anderle, ULSI Technology and Materials: Quantitative Answers by Combined Mass Spectrometry Surface Techniques (Woodbury, New York, 1998), p. 892.
32. M. L. Yu, K. Y. Ahn, and R. V. Joshi, IBM J. Res. Dev. 34, 875 (1990).
33. M. L. Yu and B. N. Eldridge, J. Vac. Sci. Technol. A 7, 625 (1989).
34. J. W. Elam, C. E. Nelson, R. K. Grubbs, and S. M. George, Surf. Sci. 479, 121 (2001).