Transient ALD simulations for a multi-wafer reactor with trenched wafers

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 8842-8848

  Lankhorst, A M ^a   Paarhuis, B D ^a,b   Terhorst, H J C M ^c   Simons, P J P M ^a   Kleijn, C R ^d  

^a TNO   (Netherlands)

^b ASML   (Netherlands)

^c ASM International NV   (Netherlands)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Atomic layer deposition (ALD); Chemical vapor deposition; Knudsen diffusion; Multi wafer batch reactor; Simulation; Trench

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; DIFFUSION; ELECTRIC REACTORS; MATHEMATICAL MODELS; WSI CIRCUITS;

KNUDSEN DIFFUSION; MOLECULAR DEPOSITION; MULTI-WAFER BATCH REACTOR;

ATOMIC LAYER DEPOSITION;

ATOMIC LAYER DEPOSITION; BOUNDARY CONDITIONS; COMPUTER SIMULATION; DIFFUSION; ELECTRIC REACTORS; MATHEMATICAL MODELS; WSI CIRCUITS;

EID: 34547684038     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.079     Document Type: Article

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