Island growth as a growth mode in atomic layer deposition: A phenomenological model

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7686-7695

  Puurunen, Riikka L ^a,b,c   Vandervorst, Wilfried ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEFECTS; FILM GROWTH; SILICON; SUBSTRATES; SURFACE ROUGHNESS;

ATOMIC LAYER DEPOSITION (ALD); GROWTH-PER-CYCLE (GPC); PHENOMENOLOGICAL MODELS; RANDOM DEPOSITION;

DEPOSITION;

EID: 11044224578     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810193     Document Type: Article

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