Observation and control of the surface kinetics of InGaN for the elimination of phase separation

Journal of Applied Physics

Volumn 112, Issue 1, 2012, Pages

  Moseley, Michael ^a   Gunning, Brendan ^a   Greenlee, Jordan ^a   Lowder, Jonathan ^a   Namkoong, Gon ^a   Alan Doolittle, W ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYERS; HIGH QUALITY; INGAN ALLOY; LOW TEMPERATURES; MISCIBILITY GAP; MODULATION SCHEMES; ROOT MEAN SQUARE ROUGHNESS; SURFACE KINETICS;

EPITAXIAL GROWTH; GALLIUM COMPOUNDS; INDIUM; MONOLAYERS; PHASE SEPARATION; SPINODAL DECOMPOSITION; SURFACE SEGREGATION;

METALS;

EID: 84864135927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4733347     Document Type: Article

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