Ga adlayer governed surface defect evolution of (0001)GaN films grown by plasma-assisted molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Koblmüller, Gregor ^a,b,c   Brown, Jay ^a   Averbeck, Robert ^b   Riechert, Henning ^b   Pongratz, Peter ^c   Speck, James S ^a  

^a University of California   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Ga adlayer coverage; GaN; Morphology; PAMBE growth; Quadrupole mass spectrometry; Surface defects

Indexed keywords

DEFECTS; DIFFUSION; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; MONOLAYERS; THIN FILMS;

GA ADLAYER COVERAGE; PAMBE GROWTH; QUADRUPOLE MASS SPECTROMETRY;

GALLIUM NITRIDE;

EID: 30344461289     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L906     Document Type: Article

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