GaN:Eu interrupted growth epitaxy (IGE): Thin film growth and electroluminescent devices

Materials Research Society Symposium Proceedings

Volumn 866, Issue , 2005, Pages 41-52

  Munasinghe, Chanaka ^a   Steckl, Andrew ^a   Nyein, Ei Ei ^b   Hömmerich, Uwe ^b   Peng, Hongying ^c   Everitt, Henry ^c   Fleischman, Zack ^d   Dierolf, Volkmar ^d   Zavada, John ^e  

^a UNIVERSITY OF CINCINNATI   (United States)

^b HAMPTON UNIVERSITY   (United States)

^c DUKE UNIVERSITY   (United States)

^d LEHIGH UNIVERSITY   (United States)

^e U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EUROPIUM; FILM GROWTH; GALLIUM NITRIDE; GLASS; PHOSPHORS; THIN FILMS;

DEVICE OPTIMIZATION; INTERRUPTED GROWTH EPITAXY (IGE);

LUMINESCENT DEVICES;

EID: 30544443368     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-866-v3.1     Document Type: Conference Paper

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