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Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 429-436

Extended defects and polarity of hydride vapor phase epitaxy GaN

(2) Jasinski, J a,b Liliental Weber, Z a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b UNIVERSITY OF WARSAW (Poland)

Author keywords

Defects; GaN; HVPE

Indexed keywords

CRYSTAL DEFECTS; ELECTRON DIFFRACTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDRIDES; METALLORGANIC VAPOR PHASE EPITAXY; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTIONS (CBED);

GALLIUM NITRIDE;

EID: 0036575618 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0096-5 Document Type: Article

Times cited : (45)

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