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Volumn 243, Issue 7, 2006, Pages 1614-1618

Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates

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EID: 33745747401     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200565228     Document Type: Conference Paper
Times cited : (7)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.