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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1379-1385

Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy

(3) Poblenz, C a Waltereit, P a Speck, J S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH TRANSIENTS; NONBONDED GROWTH; TEMPERATURE NONUNIFORMITIES;

GALLIUM NITRIDE; GERMANIUM; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; SATURATION (MATERIALS COMPOSITION);

MORPHOLOGY;

EID: 31144466211 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1993615 Document Type: Article

Times cited : (55)

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