Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2863-2865

  Martini, S ^a   Quivy, A A ^a   Da Silva, E C F ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY CONSTANTS; GROWTH CONDITIONS; INDIUM ATOMS; SEGREGATION COEFFICIENTS; SEGREGATION STRENGTH;

ATOMS; INDIUM; SEMICONDUCTING INDIUM;

SURFACE SEGREGATION;

EID: 79956026453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513182     Document Type: Article

References (11)

1. J. M. Moison, C. Guille, F. Houzay, F. Barhte, and M. van Rompay, Phys. Rev. B 40, 6149 (1989). prb PRBMDO 0163-1829
2. K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 61, 557 (1992). apl APPLAB 0003-6951
3. J. M. Garcia, J. P. Silveira, and F. Briones, Appl. Phys. Lett. 77, 409 (2000). apl APPLAB 0003-6951
4. A. Rosenauer, D. Gerthsen, D. van Dyck, M. Arzberger, G. Böhm, and G. Abstreiter, Phys. Rev. B 64, 245334 (2001). prb PRBMDO 0163-1829
5. P. J. Dobson, B. A. Joyce, J. H. Neave, and J. Zhang, J. Cryst. Growth 81, 1 (1987). jcr JCRGAE 0022-0248
6. N. Grandjean and J. Massies, J. Cryst. Growth 134, 51 (1993). jcr JCRGAE 0022-0248
7. S. Martini, A. A. Quivy, E. C. F. da Silva, and J. R. Leite (unpublished).
8. J. H. G. Owen, W. Barvosa-Carter, and J. J. Zinck, Appl. Phys. Lett. 76, 3070 (2000). apl APPLAB 0003-6951
9. R. Kaspi and K. R. Evans, Appl. Phys. Lett. 67, 819 (1995). apl APPLAB 0003-6951
10. S. Martini, A. A. Quivy, A. Tabata, and J. R. Leite, J. Appl. Phys. 90, 2280 (2001). jap JAPIAU 0021-8979
11. K. Chattopadhyay, J. Aubel, S. Sundaram, J. E. Ehret, R. Kaspi, and K. R. Evans, J. Appl. Phys. 81, 3601 (1997). jap JAPIAU 0021-8979