Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Namkoong, Gon ^a   Trybus, Elaissa ^b   Lee, Kyung Keun ^b   Moseley, Michael ^b   Doolittle, W Alan ^b   Look, David C ^c  

^a OLD DOMINION UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM NITRIDE; HOLE CONCENTRATION; SEMICONDUCTING GALLIUM;

DOPING EFFICIENCIES; FREE HOLES; GROWTH TECHNIQUES; LOWER SOLUBILITIES; MODULATION EPITAXIES;

MODULATION;

EID: 55149105053     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005640     Document Type: Article

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