InGaN-based violet laser diodes

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages

  Nakamura, S ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; QUANTUM WELL LASERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 0032655753     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/201     Document Type: Article

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