Thermal stability of thin InGaN films on GaN

Journal of Crystal Growth

Volumn 312, Issue 11, 2010, Pages 1817-1822

  Thaler, G T ^a   Koleske, D D ^a   Lee, S R ^a   Bogart, K H A ^a   Crawford, M H ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. Decomposition; A1. Photoluminescence; A1. X ray diffraction; A2. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Light emitting diodes

Indexed keywords

A1. DECOMPOSITION; A2. METALORGANIC CHEMICAL VAPOR DEPOSITION; ALLOY COMPOSITIONS; B3. LIGHT-EMITTING DIODES; FILM DEGRADATION; FIRST ORDER REACTIONS; INDIUM CONCENTRATION; METALLIC INDIUM; METALORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE MEASUREMENTS; PL INTENSITY; STRUCTURAL DECOMPOSITION; TEMPERATURE DEPENDENT; THERMAL STABILITY; XRD; XRD SIGNALS; XRD TECHNIQUE;

ACTIVATION ENERGY; CONCENTRATION (PROCESS); DECOMPOSITION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODEGRADATION; PHOTOLUMINESCENCE; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; X RAY DIFFRACTION;

INDIUM;

EID: 77951206970     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.03.008     Document Type: Article

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