In situ growth regime characterization of AIN using reflection high energy electron diffraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 2100-2104

  Burnham, Shawn D ^a   Doolittle, W Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFUSION CELLS; INTENSITY TRANSITIONS; OSCILLATION FEATURE; REPRODUCIBILITY;

ALUMINUM; CALIBRATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH;

ALUMINUM NITRIDE;

EID: 33746575122     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2219757     Document Type: Article

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