In surface segregation in InGaN/GaN quantum wells

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 471-475

  Dussaigne, A ^a   Damilano, B ^b   Grandjean, N ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

^b Picogiga International   (France)

Author keywords

A1. Reflection high energy electron diffractions; A3. Molecular beam epitaxy; Al. Segregation; B1. Indium gallium nitride

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE SEGREGATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037382721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02443-0     Document Type: Conference Paper

References (11)

1. Kisielowski C., Liliental-Weber Z., Nakamura S. Jpn. J. Appl. Phys. 36:1997;6932.
2. Chen H., Smith A.R., Feenstra R.M., Greve D.W., Northrup J.E. MRS Internet J. Nitride Semicond. Res. S1:1999;G9.5.
3. Grandjean N., Massies J., Dalmasso S., Vennéguès P., Siozade L., Hirsch L. Appl. Phys. Lett. 74:1999;3616.
4. Duxbury N., Bangert U., Dawson P., Thrush E.J., Van der Stricht W., Jacobs K., Moerman I. Appl. Phys. Lett. 76:2000;1600.
5. Waltereit P., Brandt O., Ploog K.H., Tagliente M.A., Tapfer L. Phys. Stat. Sol. B. 228:2001;49.
6. Karpov S.Yu., Makarov Yu.N. Phys. Stat. Sol. A. 188:2001;611.
7. Mayrock O., Wünsche H.-J., Henneberger F. Phys. Rev. B. 62:2000;16870.
8. Muraki K., Fukatsu S., Shiraki Y., Ito R. Appl. Phys. Lett. 61:1992;557.
9. Bernardini F., Fiorentini V., Vanderbilt D. Phys. Rev. B. 56:1997;R10024.
10. Grandjean N., Damilano B., Massies J. J. Phys.: Condens. Matter. 13:2001;6945.
11. Lefebvre P., Morel A., Gallart M., Taliercio T., Allègre J., Gil B., Mathieu H., Damilano B., Grandjean N., Massies J. Appl. Phys. Lett. 78:2001;1252.