Current status and future prospects of GaN-based LEDs and LDs

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2712-2716

  Mukai, T ^a   Nagahama, S ^a   Kozaki, T ^a   Sano, M ^a   Morita, D ^a   Yanamoto, T ^a   Yamamoto, M ^a   Akashi, K ^a   Masui, S ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DEPOSITION; LIGHT EMITTING DIODES; LOW TEMPERATURE EFFECTS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS;

ACTIVE LAYERS; BUFFER LAYERS; CONTINUOUS-WAVE OPERATION; LASING WAVELENGTH; EMISSION WAVELENGTH; THRESHOLD CURRENT DENSITY; THRESHOLD CURRENTS;

GALLIUM NITRIDE; LIGHT EMITTING DIODES;

EID: 7044286181     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405113     Document Type: Conference Paper

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