Indium segregation kinetics in InGaAs ternary compounds

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 71-74

  Karpov, S Yu ^a   Makarov, Yu N ^b  

^a SOFT IMPACT LTD   (Russian Federation)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; RATE CONSTANTS; REACTION KINETICS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES; TERNARY SYSTEMS;

RATE EQUATION MODELS;

SEMICONDUCTING FILMS;

EID: 0034507820     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01473-5     Document Type: Article

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