MBE-growth, characterization and properties of InN and InGaN

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 202-208

  Nanishi, Y ^a   Saito, Y ^a   Yamaguchi, T ^a   Hori, M ^a   Matsuda, F ^a   Araki, T ^a   Suzuki, A ^a   Miyajima, T ^b  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; RAMAN SCATTERING; SAPPHIRE; SUBSTRATES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

NITRIDATION; POLARITY; SAPPHIRE SUBSTRATES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0347659237     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303327     Document Type: Article

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