Critical thickness calculations for InGaN/GaN

Journal of Crystal Growth

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 314-317

  Holec, D ^a   Costa, P M F J ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Line defects; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL LAYERS; GALLIUM NITRIDE; MATHEMATICAL MODELS; THICKNESS MEASUREMENT;

CRITICAL THICKNESS; ENERGY BALANCE MODEL; LINE DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34047256216     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.054     Document Type: Article

References (10)

1. Costa P.M.F.J., Datta R., Kappers M.J., Vickers M.E., Humphreys C.J., Graham D.M., Dawson P., Godfrey M.J., Thrush E.J., and Mullins J.T. Phys. Stat. Solidi (A) 203 (2006) 1729
2. Matthews J.W., and Blakeslee A.E. J. Crystal Growth 27 (1974) 118
3. Fischer A., Kühne H., and Richter H. Phys. Rev. Lett. 73 (1994) 2712
4. People R., and Bean J.C. Appl. Phys. Lett. 47 (1985) 322
5. Freund L.B., and Suresh S. Thin Film Materials: Stress, Defect Formation, and Surface Evolution (2003), Cambridge University Press, Cambridge
6. Steeds J.W. Introduction to Anisotropic Elasticity Theory of Dislocations (1973), Clarendon Press, Oxford
7. Hirth J.P., and Lothe J. Theory of Dislocations (1982), Krieger Publishing Company, Malabar, FL
8. Srinivasan S., Geng L., Liu R., Ponce F.A., Narukawa Y., and Tanaka S. Appl. Phys. Lett. 83 (2003) 5187
9. Reed M.J., El-Masry N.A., Parker C.A., Roberts J.C., and Bedair S.M. Appl. Phys. Lett. 77 (2000) 4121
10. Parker C.A., Roberts J.C., Bedair S.M., Reed M.J., Liu S.X., and El-Masry N.A. Appl. Phys. Lett. 75 (1999) 2776