Extremely high hole concentrations in c-plane GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Trybus, Elaissa ^a   Doolittle, W Alan ^a   Moseley, Michael ^a   Henderson, Walter ^a   Billingsley, Daniel ^a   Namkoong, Gon ^b   Look, David C ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b OLD DOMINION UNIVERSITY   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPING; CRYSTAL QUALITIES; CRYSTALLINE QUALITY; GA FLUX; GROWTH CONDITIONS; HALL MEASUREMENTS; LIMIT SURFACE; LOW RESISTIVITY; MG INCORPORATION; P-TYPE; QUALITY MATERIALS; RESIDUAL IMPURITIES; RICH CONDITIONS; SHUTTER TIMINGS; TEMPERATURE DEPENDENT; VACANCY DEFECTS; X-RAY DIFFRACTION DATA;

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; OXYGEN; SURFACE DEFECTS; VACANCIES; X RAY DIFFRACTION;

HOLE CONCENTRATION;

EID: 67650769177     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880962     Document Type: Article

References (6)

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