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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1843-1845

Characteristics of InGaN designed for photovoltaic applications

(7) Trybus, E a Jani, O a Burnham, S a Ferguson, I a Honsberg, C b Steiner, M c Doolittle, W A a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b UNIVERSITY OF DELAWARE (United States)

c NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION COEFFICIENTS; BAND EDGE; BAND GAPS; DEVICE STRUCTURES; HIGH GROWTH RATE; HOMOJUNCTION; MINORITY CARRIER LIFETIMES; PHOTOVOLTAIC APPLICATIONS; SOLAR SPECTRUM; TRANSMISSION DATA;

ADSORPTION; CRYSTAL GROWTH; GEL PERMEATION CHROMATOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; OPEN CIRCUIT VOLTAGE; PHASE SEPARATION; SEMICONDUCTOR GROWTH; SOLAR CELLS; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 77951227216 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778693 Document Type: Conference Paper

Times cited : (14)

References (6)

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3
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- E. Trybus, G. Namkoong, W. Henderson, W.A. Doolittle, R. Liu, J. Mei, F. Ponce, M. Cheung, F. Chen, M. Furis, and A. Cartwright, J. Cryst. Growth 279, 311(2005).
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- Trybus, E.¹ Namkoong, G.² Henderson, W.³ Doolittle, W.A.⁴ Liu, R.⁵ Mei, J.⁶ Ponce, F.⁷ Cheung, M.⁸ Chen, F.⁹ Furis, M.¹⁰ Cartwright, A.¹¹

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- Trybus, E.¹ Namkoong, G.² Henderson, W.³ Burnham, S.⁴ Doolittle, W.A.⁵ Cheung, M.⁶ Cartwright, A.⁷

5
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- IEEE, Piscataway, NJ, USA
- O. Jani, C. Honsberg, Y. Huang, J. O. Song, I. Ferguson, G. Namkoong, E. Trybus, W. A. Doolittle, and S. Kurtz, in: Proceedings IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, 2006, Vol.1 (IEEE, Piscataway, NJ, USA, 2006), pp. 20-25.
- (2006) Proceedings IEEE 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, 2006 , vol.1 , pp. 20-25
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6
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- Closed-loop MBE growth of droplet-free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and in
- submitted to
- S. Burnham, G. Namkoong, and W. A. Doolittle, Closed-loop MBE growth of droplet-free GaN with very metal rich conditions using Metal Modulated Epitaxy with Mg and In, submitted to Conference Proceedings of the International Conference on Nitride Semiconductors, 2007, Las Vegas, NV, USA.
- Conference Proceedings of the International Conference on Nitride Semiconductors, 2007, Las Vegas, NV, USA
- Burnham, S.¹ Namkoong, G.² Doolittle, W.A.³

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