Impact of In bulk and surface segregation on the optical properties of (In, Ga)N/GaN multiple quantum wells

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 5-13

  Brandt, O ^a   Waltereit, P ^a,b   Jahn, U ^a   Dhar, S ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POLARIZATION; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE;

MULTIPLE QUANTUM WELLS (MQW); SURFACE SEGREGATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036650216     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200207)192:1<5::AID-PSSA5>3.0.CO;2-B     Document Type: Article

References (18)