Theoretical study of in desorption and segregation kinetics in MBE growth of InGaAs and InGaN

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 23-28

  Stanley, Irena ^a   Coleiny, Golshan ^a   Venkat, Rama ^a  

^a UNIVERSITY OF NEVADA   (United States)

Author keywords

A1. Desorption; A1. Growth model; A1. Segregation; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; DESORPTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE REACTIONS;

SURFACE KINETICS;

MOLECULAR BEAM EPITAXY;

EID: 0037380450     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02406-5     Document Type: Conference Paper

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