GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

Thin Solid Films

Volumn 496, Issue 2, 2006, Pages 636-642

  Munasinghe, C ^a   Steckl, A J ^a  

^a University of Cincinnati   (United States)

Author keywords

Gallium nitride; Lanthanides; Luminiscence; Molecular beam epitaxy

Indexed keywords

EUROPIUM; FILM GROWTH; GALLIUM NITRIDE; GLASS; MOLECULAR BEAM EPITAXY; RARE EARTH ELEMENTS; THIN FILMS;

EMISSION INTENSITY; LUMINISCENCE; THICK DIELECTRIC DEVICES;

LUMINESCENT DEVICES;

EID: 28144446046     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.328     Document Type: Article

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