Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

Journal of Electronic Materials

Volumn 33, Issue 5, 2004, Pages 395-399

  Reddy, V ^a   Kim, Sang Ho ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Auger electron spectroscopy; Glancing angle x ray diffraction; n type GaN; Ohmic contacts; X ray photoemission spectroscopy

Indexed keywords

ALUMINUM; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; GOLD; OHMIC CONTACTS; PHOTOEMISSION; RHENIUM; SEMICONDUCTOR DOPING; TITANIUM; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

GLANCING ANGLE X-RAY DIFFRACTION (GXRD); N-TYPE GAN; X RAY PHOTOEMISSION SPECTROSCOPY (XPS);

GALLIUM NITRIDE;

EID: 2442535138     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0190-y     Document Type: Conference Paper

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