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Volumn 97, Issue 24, 2010, Pages

Temperature dependence of current-voltage characteristics of Ni-AlGaN/GaN Schottky diodes

(10) Lim, Wantae a Jeong, Jae Hyun a Lee, Jae Hoon a Hur, Seung Bae a Ryu, Jong Kyu a Kim, Ki Se a Kim, Tae Hyung a Song, Sang Yeob a Yang, Jong In a Pearton, S J b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BARRIER HEIGHT INHOMOGENEITY; BARRIER HEIGHTS; BREAKDOWN VOLTAGE; FIGURE OF MERIT; FORWARD CURRENTS; MULTIFINGERS; REVERSE BREAKDOWN VOLTAGE; REVERSE LEAKAGE CURRENT; SAPPHIRE SUBSTRATES; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SPECIFIC-ON-RESISTANCE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENCE OF CURRENT; THROUGH CURRENT;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; LASERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DISTRIBUTION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78650382342 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525931 Document Type: Article

Times cited : (57)

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