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Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 94-100

Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts

(8) Fay, M W a Moldovan, G a Brown, P D a Harrison, I a Birbeck, J C b Hughes, B T b Uren, M J b Martin, T b

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b QINETIQ (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN; ANNEALING TEMPERATURES; BARRIER LAYERS; CONTACT STRUCTURE; ELECTRICAL CHARACTERIZATION; INTERFACIAL LAYER; INTERFACIAL MICROSTRUCTURE; PLANAR INTERFACE; THIN TIN; TI-NITRIDE;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; METALLURGY; OHMIC CONTACTS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING;

EID: 0036639522 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1481960 Document Type: Article

Times cited : (88)

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