Enhancement of drain current density by inserting 3 nm Al layer in the gate of AlGaNGaN high-electron-mobility transistors on 4 in. silicon

Applied Physics Letters

Volumn 89, Issue 19, 2006, Pages

  Selvaraj, S Lawrence ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRON GAS; ELECTRON TUBES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

DRAIN CURRENT DENSITIES; EXTRINSIC TRANSCONDUCTANCE; PDTIAU;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33750919814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2386919     Document Type: Article

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