Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2 O3 as gate insulator

Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

  Liu, Z H ^a   Ng, G I ^a   Arulkumaran, S ^a   Maung, Y K T ^a   Teo, K L ^a   Foo, S C ^a   Sahmuganathan, V ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ATOMIC LAYER; CHANNEL CURRENTS; DIELECTRIC LAYER; DRIFT MOBILITIES; ELECTRON SATURATION VELOCITY; GATE INSULATOR; LATERAL DISTRIBUTIONS; METAL-INSULATOR-SEMICONDUCTORS; MIS-HEMT; QUANTUM WELL; SURFACE PASSIVATION; THIN LAYERS; TRANSPORT CHARACTERISTICS; TWO-DIMENSIONAL ELECTRON GAS (2DEG); TWO-DIMENSIONAL ELECTRON GAS TRANSPORT;

ALUMINUM; ATOMIC LAYER DEPOSITION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 71949121182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3268474     Document Type: Article

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