SCOPUS 정보 검색 플랫폼

Volumn 615 617, Issue , 2009, Pages 955-958

Process parameters influence on Specific Contact Resistance (SCR) value for TiAl ohmic contacts on GaN grown on sapphire

(4) Menard, Olivier a,b Cayrel, Frederic a Collard, Emmanuel b Alquier, Daniel a

a LMP Laboratoire de Microélectronique de Puissance (France)

b STMICROELECTRONICS (France)

Author keywords

Circular TLM; GaN surface cleaning; Ohmic contacts; Process optimization

Indexed keywords

ALUMINUM NITRIDE; BUFFER LAYERS; CONTACT RESISTANCE; ELECTRIC CONTACTORS; III-V SEMICONDUCTORS; OHMIC CONTACTS; OPTIMIZATION; SAPPHIRE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE CLEANING; SURFACE TREATMENT; TITANIUM NITRIDE;

ANNEALING TEMPERATURES; CIRCULAR TLM; CIRCULAR TRANSFER LENGTH METHODS; DOPING CONCENTRATION; ELECTRICAL CHARACTERIZATION; GALLIUM NITRIDE FILMS; SPECIFIC CONTACT RESISTANCES; SURFACE CLEANING PROCEDURE;

GALLIUM NITRIDE;

EID: 79251561869 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.955 Document Type: Conference Paper

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.