Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

Journal of Crystal Growth

Volumn 249, Issue 3-4, 2003, Pages 422-428

  Ghosh, Bablu K ^a   Tanikawa, Toru ^a   Hashimoto, Akihiro ^a   Yamamoto, Akio ^a   Ito, Yoshifumi ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

A1. Characterization; A1. Stress; A3. Metalorganic chemical vapor deposition; B1. Silicon; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; ANNEALING; CRACKS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POROUS MATERIALS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; STRESSES;

NITRIDATION;

EPITAXIAL GROWTH;

EID: 0037364875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02223-6     Document Type: Article

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