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Applied Physics Express

Volumn 4, Issue 1, 2011, Pages

Crack-free, highly conducting GaN layers on Si substrates by Ge doping

(4) Dadgar, Armin a Biäsing, Jürgen a Diez, Annette a Krost, Alois a

a OTTO VON GUERICKE UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK FREE; CRACK-FREE LAYERS; DEVICE DESIGN; DISLOCATION CLIMB; DOPED LAYERS; EDGE DISLOCATION; ENGINEERING METHODS; GAN LAYERS; GE-DOPING; GERMANIUM DOPING; INDUCED DISLOCATION; SI SUBSTRATES; SILICON DOPING; STRAIN EVOLUTION; SURFACE-ROUGHENING;

CRACKS; DOPING (ADDITIVES); EDGE DISLOCATIONS; GALLIUM NITRIDE; GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TENSILE STRESS;

GALLIUM ALLOYS;

EID: 79251536520 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.011001 Document Type: Article

Times cited : (73)

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