Comparison of electrical properties in GaN grown on Si(1 1 1) and c-sapphire substrate by MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4896-4899

  Ito, Tsuneo ^a,b   Nomura, Yukiyasu ^a   Selvaraj, S Lawrence ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b DOWA Electronics Materials Co Ltd   (Japan)

Author keywords

A1. Defects; A1. Doping; A1. Impurities; A3. Metalorganic vapor phase epitaxy; B1. Nitride

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM NITRIDE; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; VAPOR PHASE EPITAXY;

A1. DEFECTS; A1. DOPING; A1. IMPURITIES; A3. METALORGANIC VAPOR-PHASE EPITAXY; B1. NITRIDE;

GALLIUM ALLOYS;

EID: 56249137199     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.029     Document Type: Article

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