Planar nearly ideal edge-termination technique for GaN devices

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 300-302

  Ozbek, A Merve ^a   Baliga, B Jayant ^a  

^a North Carolina State University   (United States)

Author keywords

Breakdown voltage; edge termination; GaN; Schottky diode

Indexed keywords

AMORPHOUS LAYER; ARGON IMPLANTATION; BREAKDOWN VOLTAGE; EDGE TERMINATION; GAN; NEUTRAL SPECIES; SCHOTTKY DIODES;

DIODES; ELECTRIC BREAKDOWN; GALLIUM ALLOYS; GALLIUM NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 79951947301     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2095825     Document Type: Article

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